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Journal Article
Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters
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- Authors
- Byoung-Gue Min, Hyung Sup Yoon, Jong-Min Lee, Seong-Il Kim, Hae Cheon Kim, Il-Hwan Choi, Kyung Wook Jang
- Issue Date
- 2011-08
- Citation
- Journal of the Korean Physical Society, v.59, no.21, pp.435-438
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, InGaP/GaAs heterojunction bipolar transistor (HBT) devices were fabricated with various distances between the electrodes and the collector mesa, various widths of the emitter electrode and various thicknesses of the nitride passivation film. Cutoff frequencies and maximum oscillation frequencies of the devices were above 40 GHz and above 62 GHz, respectively. These values are considered sufficient for applications to power amplifiers at frequencies up to 5.5 GHz. On the other hand, the devices designed to obtain reproducibility through fabrication process showed a slight degradation in the frequency characteristics but a substantial enhancement of uniformity at the emitter-collector breakdown voltage (BVceo).
- KSP Keywords
- 5 GHz, Breakdown voltage(BDV), Frequency characteristics, GaAs heterojunction bipolar transistor, Heterojunction Bipolar Transistors(HBTs), InGaP/GaAs HBT, InGaP/GaAs heterojunction, Nitride passivation, Oscillation Frequency, Passivation film, cutoff frequency