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Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
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- Authors
- In Tak Cho, Woo Seok Cheong, Chi Sun Hwang, Jeong Min Lee, Hyuck In Kwon, Jong Ho Lee
- Issue Date
- 2009-08
- Citation
- IEEE Electron Device Letters, v.30, no.8, pp.828-830
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A comparative study is made of the low-frequency noise (LFN) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al2O3 and AI2O3/ SiN?? gate dielectrics. The LFN is proportional to 1/f款, with AI2O3 /SiN?? for both devices, but the normalized noise for the AI2O3/SiN?? device is two to three orders of magnitude lower than that for the AI2O3 device. The mobility fluctuation is the dominant LFN mechanism in both devices, but the noise from the source/drain contacts becomes comparable to the intrinsic channel noise as the gate overdrive voltage increases in AI2O3/SiN?? devices. The SiN慣 interfacial layer is considered to be very effective in reducing LFN by suppressing the remote phonon scattering from the AI2O3 dielectric. Hooge's parameter is extracted to ~ 6.0 × 10-3 in Al2 O3/SiN?? devices. © 2009 IEEE.
- KSP Keywords
- Low frequency noise, Normalized noise, Orders of magnitude, Remote phonon scattering, Thin-Film Transistor(TFT), Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO), channel noise, comparative study, gate dielectric, interfacial layer