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A 60-dB Image Rejection Single-Side Band Transmitter in InGaP/GaAs HBT Technology
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- Authors
- Pil Jae Park, Hyun Kyu Yu, Nak Woong Eum
- Issue Date
- 2009-07
- Citation
- International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2009, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A single-side band (SSB) transmitter with 60-dB image rejection ratio (IRR) is presented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a high image rejection, not only matches between in (I) and quadrature (Q) blocks but also optimal mixer driving is considered. Polyphase filter (PPF) design and its operation for better IRR are shown. To get well matched I/Q signals, Gilbertcell mixers in the up-converter are operated as a linear multiplier by selecting a proper local oscillator (LO) power. The designed SSB transmitter exploits Hartley topology and it consists of active baluns, two-stage PPFs at intermediate frequency (IF) and LO frequency, double balanced I/Q mixers and current mode logic type summer. With 140-MHz IF and 1060-MHz LO frequency, proposed design demonstrates image (920 MHz) rejection ratio of better than 60 dB simultaneously achieving gain and output P1dB of 30 dB, -1 dBm respectively. The measured results are in good agreement with simulation results.
- KSP Keywords
- Active baluns, Current mode logic, Current-mode(CM), GaAs heterojunction bipolar transistor, Heterojunction Bipolar Transistors(HBTs), I/Q mixers, InGaP/GaAs HBT, InGaP/GaAs heterojunction, Intermediate frequency, Local Oscillator, Polyphase Filter(PPF)