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n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
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- Authors
- Woo-Seok Cheong
- Issue Date
- 2011-03
- Citation
- Journal of the Korean Physical Society, v.58, no.3, pp.608-611
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- Using reactive sputtering, we made transparent amorphous Sb2TeOx thin films from a metallic Sb2Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb2TeOx gate insulators deposited at room temperature showed a large hysteresis with a counterclockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb2TeOx films formed at 250 °C. After the IGZO TFT had been annealed at 200 °C for 1 hour in an O2 ambient, the mobility of the IGZO TFT was 22.41 cm2/Vs, and the drain current on-off ratio was ~108.
- KSP Keywords
- Drain current, Ga-Zn, IGZO TFTs, Metallic Sb, Mobile charges, Oxidizing atmosphere, Room temperature, Thin-Film Transistor(TFT), current on-off ratio, gate insulator, oxide thin-film transistors