상세정보
학술지
In-Ga-Zn-Oxide Thin-Film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
- 저자
- 정우석
- 발행일
- 201103
- 출처
- Journal of the Korean Physical Society, v.58 no.3, pp.608-611
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- Using reactive sputtering, we made transparent amorphous Sb2TeOx thin films from a metallic Sb2Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb2TeOx gate insulators deposited at room temperature showed a large hysteresis with a counterclockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb2TeOx films formed at 250 °C. After the IGZO TFT had been annealed at 200 °C for 1 hour in an O2 ambient, the mobility of the IGZO TFT was 22.41 cm2/Vs, and the drain current on-off ratio was ~108.
- KSP 제안 키워드
- Drain current, Ga-Zn, Gate insulator, IGZO TFTs, Metallic Sb, Mobile charges, Oxidizing atmosphere, Reactive sputtering, Room-temperature, Thin-Film Transistor(TFT), current on-off ratio