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Journal Article
Annealing-Induced Modifications of Carrier Dynamics and Plasmon-Phonon Coupling in Low-Temperature-Grown GaAs
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- Authors
- Chang Sub Kim, Ji Hee Kim, Ki Ju Yee, Doo Hyeb Youn, Kwang Yong Kang
- Issue Date
- 2009-08
- Citation
- Journal of the Korean Physical Society, v.55, no.2, pp.630-635
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- The annealing temperature dependence of the carrier dynamics was studied for a GaAs layer grown at 290 °C by using molecular beam epitaxy. The modified carrier lifetime is interpreted to be a result of the increased defect-to-defect distance caused by the aggregation process of As-related point defects. The disappearance of the plasmon-phonon coupling and the carrier-induced phonon dephasing, which are observed in coherent phonon experiments for the layer annealed at 400 °C, is consistent with the instantaneous trapping of photoexcited carriers as, observed in pump-probe measurements.
- KSP Keywords
- Aggregation process, Annealing temperature, Carrier dynamics, Coherent phonon, Low temperature(LT), Molecular beam epitaxy(MBE), Plasmon-phonon coupling, carrier lifetime, low-temperature grown GaAs, point defects, pump-probe measurements