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학술지 Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
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저자
한용현, A. Efremov, 민남기, 이현우, 윤선진, 권광호
발행일
200908
출처
Japanese Journal of Applied Physics, v.48 no.8, pp.08HD041-08HD045
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.48.08HD04
협약과제
08IB2600, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
초록
A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150W and initial mixture composition of 25% Cl 2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux. © 2009 The Japan Society of Applied Physics.
KSP 제안 키워드
Applied physics, Ar plasma, Cl 2, Etch mechanism, Etch rates, Etch selectivity, Etched surface, Etching characteristics, Gas Pressure, Higher sensitivity, Inductively-coupled plasma(ICP)