상세정보
학술지
Comparative Study of Silicon Quantum Dot Formation In-situ Grown with a Gas Mixture of SiH4+N2 and SiH4+NH3
- 발행일
- 201108
- 출처
- Journal of the Korean Physical Society, v.59 no.2, pp.308-311
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 11MC2500, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
- 초록
- In this study, we investigated the growth mechanism of silicon quantum dots (Si QDs) embedded in a Si-nitride film formed by using plasma-enhanced chemical vapor deposition. Special attention was paid to the influence of the nitrogen source, especially in molecular nitrogen (N2) and ammonia (NH3). We found that the nitrogen source played a decisive role in determining the location of nucleation sites of Si QDs. In the case of the SiH4+NH3 gas source, the Si QDs mainly nucleated at the surface of the Si substrate, in contrast to the case of SiH4+N2 which should no such tendency. We believe that a specific surface reaction of the initially adsorbed NH3 molecules forming lowdimensional structures (NH2-Si-Si-H) on the Si substrate provide the nucleation sites for Si QDs when using a SiH4+NH3 plasma.
- KSP 제안 키워드
- Gas Source, Gas mixture, In-Situ, Molecular nitrogen, NH3 plasma, Nitride film, Nitrogen source, Nucleation sites, Plasma-enhanced chemical vapor deposition(PECVD), Quantum Dot(QD), Quantum dot formation