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Comparative Study of Silicon Quantum Dot Formation In-situ Grown with a Gas Mixture of SiH4+N2 and SiH4+NH3
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- Authors
- Tae-Youb Kim, Nae-Man Park, In-Kyu You, Cheol-Jong Choi, Ansoon Kim, Maki Suemitsu
- Issue Date
- 2011-08
- Citation
- Journal of the Korean Physical Society, v.59, no.2, pp.308-311
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we investigated the growth mechanism of silicon quantum dots (Si QDs) embedded in a Si-nitride film formed by using plasma-enhanced chemical vapor deposition. Special attention was paid to the influence of the nitrogen source, especially in molecular nitrogen (N2) and ammonia (NH3). We found that the nitrogen source played a decisive role in determining the location of nucleation sites of Si QDs. In the case of the SiH4+NH3 gas source, the Si QDs mainly nucleated at the surface of the Si substrate, in contrast to the case of SiH4+N2 which should no such tendency. We believe that a specific surface reaction of the initially adsorbed NH3 molecules forming lowdimensional structures (NH2-Si-Si-H) on the Si substrate provide the nucleation sites for Si QDs when using a SiH4+NH3 plasma.
- KSP Keywords
- Gas Source, Gas mixtures, Growth Mechanism, In-Situ, Molecular nitrogen, NH3 plasma, Nitride film, Nucleation Sites, Plasma-enhanced chemical vapor deposition(PECVD), Quantum dot(Qdot), Quantum dot formation