상세정보
학술대회
High-Speed RPCVD Ge Waveguide Photodetector
- 발행일
- 200909
- 출처
- International Conference on Group IV Photonics (GFP) 2009, pp.16-18
- 출판사
- IEEE
- 초록
- We report high-speed waveguide photodetectors with RPCVD-grown Ge on SOI. The device exhibits a 3dB bandwidth of-50 GHz, a responsivity of 0.8 A/W, and a low dark current of 35 nA at {\\lambda}-1.55 μm. © 2009 IEEE.
- KSP 제안 키워드
- High Speed, Low dark current, Waveguide photodetector