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학술대회 High-Speed RPCVD Ge Waveguide Photodetector
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저자
서동우, 주지호, 김상훈, 김경옥
발행일
200909
출처
International Conference on Group IV Photonics (GFP) 2009, pp.16-18
출판사
IEEE
DOI
https://dx.doi.org/10.1109/GROUP4.2009.5338306
초록
We report high-speed waveguide photodetectors with RPCVD-grown Ge on SOI. The device exhibits a 3dB bandwidth of-50 GHz, a responsivity of 0.8 A/W, and a low dark current of 35 nA at {\\lambda}-1.55 μm. © 2009 IEEE.
KSP 제안 키워드
High Speed, Low dark current, Waveguide photodetector