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Journal Article Subband Transitions in Dual-Band n-B-n InAs/GaSb Superlattice Infrared Photodetector Identified by Photoresponse Spectra
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Authors
S. J. Lee, S. K. Noh, E. Plis, S. Krishna, K.-S. Lee
Issue Date
2009-09
Citation
Applied Physics Letters, v.95, no.10, pp.102106-1-102106-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.3212738
Project Code
08IB2800, 저온공정 고효율 LED 기술 개발, Lee Kyu-Seok
Abstract
The subband transitions in dual-band n-B-n InAs/GaSb type-II superlattice infrared photodetector are identified by the photoresponse (PR) spectra. In the mid- and long-wavelength PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion and tunneling currents. © 2009 American Institute of Physics.
KSP Keywords
Boron nitride(BN), Dual-band, InAs/GaSb Type-II superlattice, InAs/GaSb superlattice, Tunneling current, infrared photodetector, long wavelength