상세정보
학술지
Subband Transitions in Dual-Band n-B-n InAs/GaSb Superlattice Infrared Photodetector Identified by Photoresponse Spectra
- 저자
- 이상준, 노삼규, E. Plis, S. Krishna, 이규석
- 발행일
- 200909
- 출처
- Applied Physics Letters, v.95 no.10, pp.102106-1-102106-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 08IB2800, 저온공정 고효율 LED 기술 개발, 이규석
- 초록
- The subband transitions in dual-band n-B-n InAs/GaSb type-II superlattice infrared photodetector are identified by the photoresponse (PR) spectra. In the mid- and long-wavelength PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion and tunneling currents. © 2009 American Institute of Physics.
- KSP 제안 키워드
- Boron nitride(BN), Dual-band, InAs/GaSb Type-II superlattice, InAs/GaSb superlattice, Tunneling current, infrared photodetector, long wavelength