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학술지 Loop-Back WDM-PON With 100 Gb/s Capacity Using Spectrally Sliced ASE Injected RSOA
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저자
조승현, 이지현, 이한협, 명승일, 이종현, 이상수
발행일
201305
출처
IEEE/OSA Journal of Optical Communications and Networking, v.5 no.5, pp.447-456
ISSN
1943-0620
출판사
IEEE, OSA
DOI
https://dx.doi.org/10.1364/JOCN.5.000447
협약과제
12VI1200, OFDMA 기반 10Gb/s급 광링크 및 유무선 융합 액세스 네트워크 기술 개발, 명승일
초록
We experimentally investigated the 1.25 Gb/s operation of a spectrally sliced amplified spontaneous emission (ASE) injected reflective semiconductor optical amplifier (RSOA) with 50 GHz channel spacing using an injection current adjustment, dispersion management, and the use of an optical receiver with an optimized decision threshold level. We mitigated the relative intensity noise (RIN) degradation caused by post-filtering through the injection current adjustment, and also alleviated the dispersion-induced RIN degradation with the help of the dispersion management method. Finally, the use of an optical receiver with an optimized decision threshold level eliminated error floors, which were attributed to an unequal noise distribution between the mark level and the space level. We also successfully demonstrated a loop-back wavelength division multiplexing-passive optical network (WDM-PON) with a 100 Gb/s (80 × 1.25 Gb/s) capacity using a spectrally sliced ASE injected RSOA by means of the three aforementioned methods. We also analyzed and examined the transmission impairments, such as the dispersion penalty and back-reflection induced penalty, in a 1.25 Gb/s bidirectional WDM-PON based on an RSOA with 50 GHz channel spacing. © 2009-2012 OSA.
KSP 제안 키워드
100 Gb/s, Back-reflection, Channel spacing, Injection current, Optical receiver, Reflective Semiconductor Optical Amplifier, Relative intensity noise, Semiconductor optical amplifiers(SOAs), Wavelength Division Multiplexing(WDM), Wavelength-division-multiplexing passive optical network(WDM-PON), amplified spontaneous emission