BROWSE
Detail
Journal Article
High-Modulation Efficiency Silicon MachZehnder Optical Modulator based on Carrier Depletion in a PN Diode
- Authors
- Jeong Woo Park, Jong Bum You, In Gyoo Kim, Gyung Ock Kim
- Issue Date
- 2009-08
- Citation
- Optics Express, v.17, no.18, pp.15520-15524
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Project Code
- 09MB1100, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- We present a high phase-shift efficienct Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a V ?I ? of 1.8V쨌cm and phase shifter loss of 4.4dB/mm. A device using a 750 μm-long phase-shifter exhibits an eye opening at 12.5Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping. © 2009 Optical Society of America.
- KSP Keywords
- 2 mm, Carrier depletion, Cross-sectional area(CSA), Depletion effect, Mach-Zehnder(MZ), Operating speed, PN diode, Phase Shifter, Silicon optical modulator, Travelling wave, electrode design
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
