상세정보
학술대회
Center Wavelength Uniformity of Shallow-Etched Silicon Photonic Wire AWG
- 발행일
- 200909
- 출처
- International Conference on Group IV Photonics (GFP) 2009, pp.128-130
- 출판사
- IEEE
- 협약과제
- 09MB1100, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- We have fabricated a WDM device consisting of two or three shallow-etched AWGs on 5-inch SOI wafer. The center wavelength difference between the closely located AWGs was smaller than 1 nm. Meanwhile, the center wavelength deviation over the whole wafer was larger than 5 nm. ©2009 IEEE.
- KSP 제안 키워드
- 5 nm, Center wavelength, Etched silicon, Photonic wire, Silicon photonics, Soi wafer, wavelength deviation