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Conference Paper
Center Wavelength Uniformity of Shallow-Etched Silicon Photonic Wire AWG
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- Authors
- Duk Jun Kim, Jung Hyung Pyo, Gyung Ock Kim
- Issue Date
- 2009-09
- Citation
- International Conference on Group IV Photonics (GFP) 2009, pp.128-130
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Project Code
- 09MB1100, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- We have fabricated a WDM device consisting of two or three shallow-etched AWGs on 5-inch SOI wafer. The center wavelength difference between the closely located AWGs was smaller than 1 nm. Meanwhile, the center wavelength deviation over the whole wafer was larger than 5 nm. ©2009 IEEE.
- KSP Keywords
- 5 nm, Center wavelength, Etched silicon, Photonic wire, Silicon photonics, Soi wafer, wavelength deviation