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PA and LNA for millimeter‐wave WPAN using 90 nm CMOS process
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- Authors
- Min Soo Kang, Bong Su Kim, Woo Jin Byun, Kwang Seon Kim, Seung Hyeub Oh, Stephane Pinel, Joy Laskar, Myung Sun Song
- Issue Date
- 2009-09
- Citation
- Microwave and Optical Technology Letters, v.51, no.9, pp.2029-2032
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- We present the design and fabrication of power amplifier (PA) and low noise amplifier (LNA) in 60 GHz using 90 nm CMOS process. Both of them have three stages topology. We obtained small signal gain of 21 dB, P 1dB of 4 dBm, and input/output return losses of <-9 dB in PA. We also obtained small signal gain of 25 dB, noise figure of <7 dB, P 1dB of 1.5 dBm, input/out return losses of <-8 dB in LNA. The die sizes of PA and LNA are 1.1 × 0.8 mm 2 and 0.59 × 0.78 mm 2, respectively. Both sizes contain the RF pads and bias pads. Especially, the size of LNA is reduced by using hairpin type matching structure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2029-2032, 2009 Published online in Wiley InterScience (www.interscience.wiley.com).
- KSP Keywords
- 60 GHz, 90 nm CMOS, CMOS Process, Design and fabrication, Matching structure, Return Loss, Small signal gain, noise figure, power amplifiers(PAs)