상세정보
학술지
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
- 저자
- 백강준, 노용영, 김동유
- 발행일
- 200906
- 출처
- Solid-State Electronics, v.53 no.11, pp.1165-1168
- ISSN
- 0038-1101
- 출판사
- Elsevier
- 협약과제
- 09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
- 초록
- We investigate here charge transfer and trapping characteristics of various chargeable polymer dielectric layers, polystyrene (PS), poly(4-vinyl naphthalene) (PVN), and amorphous fluoropolymer (Teflon짰 AF) in non-volatile pentacene field-effect transistor (FET) memory devices. Non-volatile memory properties, i.e., the degree of threshold voltage (VTh) shifts (memory window), the programming and erasing bias, and the retention time, strongly depended on the selection of a charge storage layer, due to its electronic and dielectric properties. The pentacene FETs with PVN or PS showed reversible positive and negative VTh shifts by an application of external gate bias. In Teflon짰 AF device, most significant positive VTh shift was obtained indicating a efficient electron injection whereas showed inefficient erasing characteristics via hole injection and storing due to a high electronegative properties of fluorine units in the dielectric. This result indicates importance of a selection of the chargeable polymer dielectric to obtain efficient organic non-volatile memory with a long retention time. © 2009 Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- Amorphous fluoropolymer, Charge storage, Charge transfer, Dielectric properties, Field-effect transistors(FETs), Memory applications, Memory properties, Non-Volatile Memory(NVM), Organic field-effect, Polymer dielectric, Positive and negative