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학술지 Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
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저자
윤성민, 정순원, 양신혁, 강승열, 황치선, 유병곤
발행일
200909
출처
Japanese Journal of Applied Physics, v.48 no.9, pp.1-4
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.48.09KA20
협약과제
08IB2100, 강유전체 박막재료의 특성연구, 유병곤
초록
Ensuring the sound ferroelectric behaviors of the ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] after various fabrication processes routinely performed for the device integration is very important for the practical nonvolatile memory applications using P(VDF-TrFE). In this work, the changes in the electrical and physical properties of the P(VDF-TrFE) thin film were investigated, assuming that some chemical treatments are involved in the fabrication processes for P(VDF-TrFE)-based memory devices. Although the treatments in the conventional developer and acids fortunately caused no critical damage to the film, it was found that the use of some resist strippers provides harsh conditions to the film. They caused the degradation in the crystallinity and surface roughness, and hence large increases in coercive field and leakage current were observed. Among the chemicals tested in this work, we proposed 1-methoxy-2-propanol as the best resist stripper. Metal-ferroelectric-metal capacitors and metal-ferroelectric-insulator- semiconductor diodes were also fabricated using the proposed patterning methods, in which no critical degradation in ferroelectric memory effects was observed when the size of capacitor decreased to 30 × 30 μm2. We conclude that these experimental studies can give us a useful solution to realizing memory arrays and related integrated circuits by exploiting P(VDF-TrFE)-based nonvolatile memory devices. © 2009 The Japan Society of Applied Physics.