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Journal Article
Growth and Properties of Sb-doped ZnMgO Thin Films Deposited Usingrf Magnetron Sputtering
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- Issue Date
- 2009-09
- Citation
- Journal of the Korean Physical Society, v.55, no.3, pp.1123-1127
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We report on the growth and the properties of Sb-doped ZnMgO thin films deposited using radio-frequency (rf) magnetron sputtering for applications as transparent thin film transistors (TFTs) with p-type channels. The target was prepared with high-purity MgO mixed with ZnO and Sb 2 O 5 as doping agents. Thin films were heat-treated in vacuum, oxygen, and nitrogen atmospheres. The effects of the working gas (Ar/O 2 ) ratios and the annealing conditions on the structural and the electrical properties were investigated. The atomic ratio of Zn/Mg in the films, and accordingly the films properties, depended on the post-annealing conditions and on the oxygen partial pressure in the working gas during sputtering.
- KSP Keywords
- Annealing conditions, As doping, Atomic ratio, Doping agents, Electrical properties, Films properties, Heat-treated, High purity, O 2, Post-annealing, Radio frequency (RF) magnetron sputtering