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학술대회 A Surface-Micromachined MEMS Acoustic Sensor with X-Shape Bottom Electrode Anchor
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저자
이재우, 고상춘, 제창한, 이명래, 최창억, 양일석, 허세완, 김종대
발행일
200910
출처
SENSORS 2009, pp.1313-1316
출판사
IEEE
DOI
https://dx.doi.org/10.1109/ICSENS.2009.5398401
협약과제
09MB1500, 유비쿼터스 단말용 부품 모듈, 김종대
초록
A surface-micromachined capacitive-type microelectro-mechanical system (MEMS) acoustic sensor with X-shape bottom electrode anchor on a Si substrate is presented. As it is designed to be implemented on only one side of a substrate for a simple monolithic integrated process, this sensor has X-shape bottom electrode anchor fabricated. The anchor operates to remove the back side process of wafer for a conventional back chamber because the chamber is formed through Si surface etching by an isotropic dry etcher of XeF2. The Si MEMS acoustic sensor proposed in this paper has a diameter of 300 μm and a back chamber depth of 25 μm. It shows a pull down voltage of 9.1 V at 1 kHz and a zero-bias capacitance of 1.87 pF. Additionally, the sensor has an opencircuit sensitivity of 0.57 mV/Pa at 1 kHz on a bias of 5 V. ©2009 IEEE.
KSP 제안 키워드
Acoustic Sensor, Bottom electrode, Capacitive-type, Micro-electro-mechanical system(MEMS), Monolithic integrated, Si MEMS, Si substrate, Si surface etching, integrated process, zero-bias