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Conference Paper
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
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- Authors
- Doo Hee Cho, Sang Hee Ko Park, Shin Hyuk Yang, Chun Won Byun, Kyoung Ik Cho, Min Ki Ryu, Sung Mook Chung, Woo Seok Cheong, Sung Min Yoon, Chi Sun Hwang
- Issue Date
- 2009-10
- Citation
- International Meeting on Information Display (IMID) 2009, pp.318-321
- Language
- English
- Type
- Conference Paper
- Abstract
- We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an Al 2 O 3 protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+ AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the O 2 annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the O 2 annealing and the water vapor PL.
- KSP Keywords
- AMOLED display, Active Layer, Al-Zn, Bias stability, Display Panel, O 2, O 3, Protective layer, Rf Magnetron sputtering, Room temperature, Subthreshold slope(SS)