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K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors
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- Authors
- Youngrak Park, Youngmin Kim, Yumin Koh, Jihoon Kim, Kwangseok Seo, Jinho Jeong, Youngwoo Kwon
- Issue Date
- 2012-11
- Citation
- Microwave and Optical Technology Letters, v.54, no.11, pp.2624-2626
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- A broadband watt-level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K-band. The quadruple-stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt-level output powers. The fabricated power amplifier using 130-nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3-dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt-level single-chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc.
- KSP Keywords
- 18 GHz, Breakdown Voltage, High-electron mobility transistor(HEMT), Output power, Single chip, Voltage Limit, Watt-Level, k-band, metamorphic high electron mobility transistor(mHEMT), power amplifiers(PAs), power bandwidth