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학술지 K-Band Watt-Level mHEMT Power Amplifier using Quadruple-Stacked Transistors
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저자
박영락, 김영민, 고유민, 김지훈, 서광석, 정진호, 권영우
발행일
201211
출처
Microwave and Optical Technology Letters, v.54 no.11, pp.2624-2626
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.27140
협약과제
12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
초록
A broadband watt-level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K-band. The quadruple-stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt-level output powers. The fabricated power amplifier using 130-nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3-dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt-level single-chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc.
키워드
K-band, metamorphic high electron mobility transistor, power amplifier, stacked FET
KSP 제안 키워드
18 GHz, Breakdown voltage(BDV), High electron mobility transistor(HEMT), K-band, Output power, Single-Chip, Voltage Limit, Watt-Level, metamorphic high electron mobility transistor(mHEMT), power amplifiers(PAs), power bandwidth