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Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO
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- 발행일
- 200910
- 출처
- International Conference on Solid State Devices and Materials (SSDM) 2009, pp.280-281
- KSP 제안 키워드
- Electrical characterization, Non-Volatile Memory(NVM), Thin-Film Transistor(TFT), VDF-TrFE, device design, thin film(TF)