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Conference Paper
Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO
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- Authors
- Sung Min Yoon, Shin Hyuk Yang, Sang Hee Ko Park, Soon Won Jung, Chun Won Byun, Doo Hee Cho, Seung Youl Kang, Chi Sun Hwang, Byoung Gon Yu
- Issue Date
- 2009-10
- Citation
- International Conference on Solid State Devices and Materials (SSDM) 2009, pp.280-281
- Language
- English
- Type
- Conference Paper
- Project Code
- 09MB2900, Smart window with transparent electronic devices, Cho Kyoung Ik
- KSP Keywords
- Electrical characterization, Non-Volatile Memory(NVM), Thin-Film Transistor(TFT), VDF-TrFE, device design, thin film(TF)