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Journal Article
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
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- Authors
- Sung-Min Yoon, Shinhyuk Yang, Chun-Won Byun, Soon-Won Jung, Sang-Hee Ko Park, Doo-Hee Cho, Min-Ki Ryu, Oh-Sang Kwon, Byeong Hoon Kim, Chi-Sun Hwang, Kyoung-Ik Cho
- Issue Date
- 2011-05
- Citation
- Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- We proposed and fabricated a transparent nonvolatile memory thin-film transistor (T-MTFT). The T-MTFT was composed of a ferroelectric copolymer gate insulator of poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] and an oxide semiconducting active channel of amorphous Al-Zn-Sn-O (AZTO). The fabrication procedures were so designed as to have both good transparency and high performances even at a low process temperature below 200 °C. Consequently, the memory window with a gate voltage sweep of-10 to 10 V, the field-effect mobility in the linear region, the subthreshold swing, the on/off ratio, and the gate leakage current were obtained to be 8.6 V, 32.2 cm2 V-1쨌s-1, 0.45 V/dec, 108, and 10-12 A, respectively. Although the photo-response and the retention behaviors should be more improved and optimized, all these obtained characteristics were very promising for the future transparent electronics. PACS numbers: 73.40.Qv, 77.80.-e, 85.30.-z, 85.30.Tv, 85.50.Gk.
- KSP Keywords
- 77.80.-e, Active channel, Al-Zn, Gate voltage, Nonvolatile memory(NVM), ON/OFF ratio, Photo response, Process temperature, Thin-Film Transistor(TFT), Transparent electronics, VDF-TrFE(PZT/P)