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Conference Paper
Study on the Surface Characteristics of Parylene-C Films in Inductively Coupled O2/CF4 Gas Plasma
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- Authors
- Yong Hyun Ham, Kyu Ha Baek, Kun Sik Park, Hong Sik Shin, Ho Jin Yun, Kwang Ho Kwon, Lee Mi Do
- Issue Date
- 2009-10
- Citation
- International Meeting on Information Display (IMID) 2009, pp.1399-1401
- Language
- English
- Type
- Conference Paper
- Abstract
- In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and CF 4 /O 2 gas mixture. The CF 4 gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 -373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the CF 4 fraction. Moreover, the contact angle was highly related a CF x functional group on parylene films.
- KSP Keywords
- CF 4, CF x, Contact angle(CA), Contact angle measurements, Etch rates, Functional groups, Gas fraction, Gas mixtures, Gas plasma, O 2, O radical