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Journal Article Enhanced Photo-Assisted Electrical Gating in Vanadium Dioxide based on Saturation-Induced Gain Modulation of Erbium-Doped Fiber Amplifier
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Authors
이용욱, Kim Bongjun, Choi Sungyoul, 이용완, Hyun-Tak Kim
Issue Date
200910
Source
Optics Express, v.17 no.22, pp.19605-19610
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
DOI
https://dx.doi.org/10.1364/OE.17.019605
Project Code
09MB2300, New electronic device using electric current jump, Hyun-Tak Kim
Abstract
By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of -40 s were successively generated at a repetition rate of 1 kHz. © 2009 Optical Society of America.
KSP Keywords
Chopping frequency, Gain modulation, High Speed, Photo-assisted, Repetition rate, Temporal duration, Two-terminal device, Vanadium dioxide thin film, electrical gating, switching characteristics, thin film(TF)