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Conference Paper
Oxide TFT Structure Affecting the Device Performance
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- Authors
- Sang Hee Ko Park, Doo Hee Cho, Chi Sun Hwang, Min Ki Ryu, Shin Hyuk Yang, Chun Won Byun, Sung Min Yoon, Woo Seok Cheong, Kyoung Ik Cho
- Issue Date
- 2009-10
- Citation
- 한국정보디스플레이학회 학술 대회 2009, pp.385-388
- Publisher
- 한국정보디스플레이학회
- Language
- English
- Type
- Conference Paper
- Abstract
- We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.
- KSP Keywords
- Active Layer, Bias stress, Bottom gate structure, Defects formation, Device structure, Energetic bombardment, Gate insulator, Gate oxide, Layer deposition, Oxide TFTs, Positive bias