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Conference Paper
High Mobility In-Ga-Zn-Oxide Thin-Film Transistor with Sb2TeOx Gate Insulator Fabricated by Reactive Sputtering
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- Authors
- Woo Seok Cheong, Sung Min Yoon, Shin Hyuk Yang, Chi Sun Hwang
- Issue Date
- 2009-10
- Citation
- International Conference on Solid State Devices and Materials (SSDM) 2009, pp.1-2
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Ga-Zn, Gate insulator, High Mobility, Reactive sputtering, Thin-Film Transistor(TFT), oxide thin-film transistors, thin film(TF)