상세정보
학술대회
High Mobility In-Ga-Zn-Oxide Thin-Film Transistor with Sb2TeOx Gate Insulator Fabricated by Reactive Sputtering
Cited - time in 
Download 0 time
Share 
Download 0 time
Share
- 발행일
- 200910
- 출처
- International Conference on Solid State Devices and Materials (SSDM) 2009, pp.1-2
- 협약과제
- 09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- KSP 제안 키워드
- Ga-Zn, Gate insulator, High Mobility, Reactive sputtering, Thin-Film Transistor(TFT), oxide thin-film transistors, thin film(TF)