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Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
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- Authors
- Doo Hee Cho, Sang Hee Ko Park, Shin Hyuk Yang, Chun Won Byun, Min Ki Ryu, Jeong Ik Lee, Chi Sun Hwang, Sung Min Yoon, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-11
- Citation
- IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346
- ISSN
- 0916-8524
- Publisher
- 일본, 전자정보통신학회 (IEICE)
- Language
- English
- Type
- Journal Article
- Abstract
- We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array. Copyright © 2009 The Institute of Electronics, Information and Communication Engineers.
- KSP Keywords
- Active Layer, Al-Zn, Bottom gate structure, Information and communication, Oxide material, Post-annealing, Room-temperature, TFT array, Thin-Film Transistor(TFT), Turn-on voltage, Zn-Sn-O(ZTO)