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학술지 Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
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조두희, 박상희, 양신혁, 변춘원, 유민기, 이정익, 황치선, 윤성민, 추혜용, 조경익
IEICE Transactions on Electronics, v.E92-C no.11, pp.1340-1346
일본, 전자정보통신학회 (IEICE)
We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array. Copyright © 2009 The Institute of Electronics, Information and Communication Engineers.
KSP 제안 키워드
Active Layer, Al-Zn, Bottom gate structure, Information and communication, Oxide material, Post-annealing, Room-temperature, TFT array, Thin-Film Transistor(TFT), Turn-on voltage, Zn-Sn-O(ZTO)