상세정보
학술지
Optical and Electrical Properties of TixSi1-xOy Films
- 발행일
- 200912
- 출처
- ETRI Journal, v.31 no.6, pp.675-679
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 08IB2600, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- TixSi1-xOy(TSO) thin films are fabricated using plasmaenhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of TiO2 and SiO 2. The refractive indices of SiO2 and TiO2 are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films. Copyright © 2009 ETRI.
- KSP 제안 키워드
- Atomic Layer Deposition, Cycle ratio, Optical and electrical properties, Si wafer, SiO 2, Thin film solar cells, Ti content, antireflection coating, coating layer, current-voltage characteristics, electrical properties(I-V curve)