상세정보
학술지
80-110 GHz MMIC Amplifiers Using a 0.1-μm GaAs-Based mHEMT Technology
- 발행일
- 201208
- 출처
- Microwave and Optical Technology Letters, v.54 no.8, pp.1978-1982
- ISSN
- 0895-2477
- 출판사
- John Wiley & Sons
- 협약과제
- 12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- A 80-110 GHz broadband MMIC low noise amplifiers (LNAs) have been developed for W-band passive image sensors.A monolithic microwave integrated circuit (MMIC) LNAs consists of a four-stage single-ended type and a four-stage balanced type. The chip set was fabricated using a 0.1-μm gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor process based on a four-inch substrate. The single-ended type LNA (ver.1) achieved a gain of 20 dB over in a band between 85 and 105 GHz and a noise figure of lower than 5.3 dB in a frequency range of 86.5-100 GHz. The single-ended type LNA (ver.2) exhibited a gain of 27 dB with a noise figure of 4.3 dB at 94 GHz. The external DC biasing conditions of V ds and V gs were 1 and -0.2 V, respectively, and the total current consumption of the LNA was 40 mA. The chip size was 2 × 1.2 mm 2. The balanced-type amplifier demonstrated a measured small signal gain of over 18 dB from 80 to 100 GHz. The external DC biasing conditions of V ds and V gs were 1 and -0.2 V, respectively, and the total current consumption was 82 mA. The chip size was 2.9 × 2.5 mm 2. © 2012 Wiley Periodicals, Inc.
- KSP 제안 키워드
- 110 GHz, 2 mm, 5 GHz, 94 GHz, Balanced type, Broadband MMIC, Current consumption, DC biasing, Frequency Range, High electron mobility transistor(HEMT), Image Sensor