BROWSE
Detail
Journal Article
A 1–12‐GHz variable‐gain low‐noise amplifier MMIC using 0.25‐μm SiGe BiCMOS technology
Cited 1 time in 
Share 
Share
- Authors
- Woojin Chang, Sang-Heung Lee, Jae-Kyoung Mun, Eunsoo Nam
- Issue Date
- 2012-08
- Citation
- Microwave and Optical Technology Letters, v.54, no.8, pp.1935-1937
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- This article introduces an 1-12-GHz differential two-stage variable-gain low-noise amplifier (VGLNA) using 0.25-μm SiGe:C BiCMOS commercial process technology for ultra-wideband system.The results of the fabricated monolithic microwave integrated circuit amplifier show 18-dB gain with a 3-dB frequency band of 1.3-11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5-V supply voltage and 55-mW total dc power consumption. The gain-control range is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1 × 0.9 mm 2 including all testing pads for RF and dc probes. © 2012 Wiley Periodicals, Inc.
- KSP Keywords
- Control range, Dc power, Low-Noise Amplifier(LNA), Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Power Consumption, SiGe BiCMOS technology, Supply voltage, Two-Stage, Ultra wide band(UWB), frequency band