상세정보
학술지
A 1-12-GHz Variable-Gain Low-Noise Amplifier MMIC Using 0.25-μm SiGe BiCMOS Technology
- 발행일
- 201208
- 출처
- Microwave and Optical Technology Letters, v.54 no.8, pp.1935-1937
- ISSN
- 0895-2477
- 출판사
- John Wiley & Sons
- 협약과제
- 12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
- 초록
- This article introduces an 1-12-GHz differential two-stage variable-gain low-noise amplifier (VGLNA) using 0.25-μm SiGe:C BiCMOS commercial process technology for ultra-wideband system.The results of the fabricated monolithic microwave integrated circuit amplifier show 18-dB gain with a 3-dB frequency band of 1.3-11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5-V supply voltage and 55-mW total dc power consumption. The gain-control range is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1 × 0.9 mm 2 including all testing pads for RF and dc probes. © 2012 Wiley Periodicals, Inc.
- KSP 제안 키워드
- Control range, Dc power, Microwave monolithic integrated circuits(MMIC), Noise Figure(NF), Power Consumption, SiGe BiCMOS technology, Supply voltage, Two-Stage, Ultra-Wide Band(UWB), frequency band, low noise amplifier(LNA)