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Journal Article 적외선 마이크로 볼로미터를 위한 Si1-xSbx 박막의 특성
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Authors
이동근, 류상욱, 양우석, 조성목, 전상훈, 류호준
Issue Date
2009-09
Citation
반도체 및 디스플레이장비학회지, v.8, no.3, pp.13-17
ISSN
1738-2270
Publisher
한국반도체및디스플레이장비학회
Language
Korean
Type
Journal Article
Abstract
we have studied characterization of microbolometer based on the co-sputtered silicon-antimony (Si1-xSbx) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at 200℃ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited Si1-xSbx films have been measured the range of -2.3 ~ -2.8 %/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over 250℃. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.