상세정보
학술지
Etching Characteristics and Mechanism of Ga-doped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas
- 발행일
- 201104
- 출처
- Vacuum, v.85 no.11, pp.1021-1025
- ISSN
- 0042-207X
- 출판사
- Elsevier
- 초록
- We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface. © 2011 Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- Additive gas, Etch characteristics, Etch rates, Etched surface, Etching characteristics, Ga-ZnO, Ga-doped ZnO thin films, Gas Pressure, Gas fraction, Inductively-coupled plasma(ICP), Input power