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Journal Article Etching Characteristics and Mechanism of Ga-doped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas
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Authors
Y.-H. Ham, A. Efremov, H.W. Lee, S.J. Yun, N.K. Min, K.-H. Baek, L.-M. Do, K.-H. Kwon
Issue Date
2011-04
Citation
Vacuum, v.85, no.11, pp.1021-1025
ISSN
0042-207X
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.vacuum.2011.03.009
Abstract
We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface. © 2011 Elsevier Ltd. All rights reserved.
KSP Keywords
Additive gas, Etch characteristics, Etch rates, Etched surface, Etching characteristics, Ga-ZnO, Ga-doped ZnO thin films, Gas Pressure, Gas fraction, Inductively-coupled plasma(ICP), Input power