상세정보
학술지
Low Temperature Grown Polycrystalline La0.7Sr0.3MnO3 thin Films on Amorphous SiO2 Substrates by Rf Magnetron Sputtering
- 발행일
- 200911
- 출처
- Journal of Vacuum Science and Technology A, v.27 no.4, pp.595-600
- ISSN
- 0734-2101
- 출판사
- American Vacuum Society (AVS)
- 협약과제
- 09MB1600, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
- 초록
- The La0.7 Sr0.3 Mn O3 thin films have been prepared on amorphous Si O2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature. © 2009 American Vacuum Society.
- KSP 제안 키워드
- Field effect transistors(Substrate temperature), Grain size, High Temperature, Low substrate temperature, Low temperature(LT), Oxygen flow rate, Physical Properties, RF Power, RF magnetron sputtering technique, amorphous Si, electrical resistivity