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Conference Paper
The Effects of Metal Electrodes on the Electrical Properties of Flexible IGZO Thin Film Transistors
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- Authors
- Woo Seok Cheong, Jun Yong Bak, Hong Seung Kim, Chun Won Byun, Sung Mook Chung, Gi Heon Kim, Jong Hyurk Park, Chi Sun Hwang
- Issue Date
- 2009-11
- Citation
- International Workshop on Flexible and Printable Electronics (IWFPE) 2009, pp.1-1
- Language
- English
- Type
- Conference Paper
- Abstract
- In this study, we have developed IGZO TFTs on both glass and AryLite substrate for low temperature processing below 200 °C. Using various metals (Mo, Cr, Ta, and Pt), the effects of S&D electrodes on the electrical properties of IGZO-TFTs could be evaluated. IGZO TFTs with Ta electrode showed the best performances from the mobility of 19.58 cm2/Vs, the SS of 0.13 and Von of 0 V, but most devices without Al2O3 buffer layer showed serious negative shifts of Von.
- KSP Keywords
- Buffer layer, IGZO TFTs, IGZO thin film, Low temperature(LT), Low temperature processing, Thin-Film Transistor(TFT), electrical properties(I-V curve), metal electrode, thin film(TF)