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Microscopic Origin of Bipolar Resistive Switching of Nanoscale Titanium Oxide thin Films
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- Authors
- Hu Young Jeong, Jeong Yong Lee, Sung Yool Choi, Jeong Won Kim
- Issue Date
- 2009-11
- Citation
- Applied Physics Letters, v.95, no.16, pp.162108-1-162108-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films. © 2009 American Institute of Physics.
- KSP Keywords
- Analytical transmission electron microscopy, Direct observation, Electron microscopy(SEM), Oxidation-reduction, Oxide thin films, Oxygen ions, Titanium oxide film, Transmission Electron Microscopy(TEM), bipolar resistive switching behavior, energy-filtering transmission electron microscopy, high-resolution transmission electron microscopy(HRTEM)