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High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
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- Authors
- Myungsim Jun, Youngsam Park, Younghoon Hyun, Taehyoung Zyung, Moongyu Jang, Sung-Jin Choi
- Issue Date
- 2011-05
- Citation
- Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4
- ISSN
- 1071-1023
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, and saturation current were investigated as a function of gate length and channel width. The device with a gate length of 30 nm showed excellent short channel characteristics with an on/off current ratio larger than 107, an off-leakage current less than 10pA/μm, and a subthreshold swing of 110 mV/decades. © 2011 American Vacuum Society.
- KSP Keywords
- Barrier Metal, Channel Characteristics, Channel Width, Field Effect Transistor(FET), High performance, Insulator substrates, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Schottky barrier, Short channel, Silicon On Insulator(SOI)