상세정보
학술지
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
- 발행일
- 201105
- 출처
- Journal of Vacuum Science and Technology B, v.29 no.3, pp.1-4
- ISSN
- 1071-1023
- 출판사
- American Vacuum Society (AVS)
- 협약과제
- 11MB1800, 자가충전 전원모듈 기반 EPMIC 기술 개발, 양일석
- 초록
- Platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors with sizes varying from 350 to 30 nm were fabricated on silicon-on-insulator substrates. Threshold voltage, subthreshold swing, drain-induced barrier lowering, and saturation current were investigated as a function of gate length and channel width. The device with a gate length of 30 nm showed excellent short channel characteristics with an on/off current ratio larger than 107, an off-leakage current less than 10pA/μm, and a subthreshold swing of 110 mV/decades. © 2011 American Vacuum Society.
- KSP 제안 키워드
- Barrier Metal, Channel Characteristics, Channel Width, Field-effect transistors(FETs), High performance, Insulator substrates, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), ON/OFF current ratio, Schottky barrier, Short channel