BROWSE
Detail
Conference Paper
Terahertz Detection with Polycrystalline GaAs Films
Cited - time in 
Share 
Share
- Authors
- S. Y. Jeong, M. C. Paek, S. B. Kang, M. H. Kwak, S. K. Choi, H. C. Ryu, S. I. Kim, D. W. Kang, K. Y. Kang, D. Kim
- Issue Date
- 2009-11
- Citation
- The International Workshop on Terahertz Technology (TeraTech) 2009, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Terahertz detection properties of polycrystalline GaAs thin films have been investigated. We have grown GaAs films on 2 inch SI-GaAs, sapphire, and high resistivity Si substrates at low temperature from 150 to 300℃ and then insitu annealed at 600℃, respectively. A photoconductive switching THz-TDS system with a 17 fs Ti-sapphire laser has been employed to test the THz detection properties. We have obtained a high SNR of the detected THz wave with the polycrystalline GaAs films on SI-GaAs, sapphire, and high resistivity Si substrates. The THz signal detected with the GaAs film grown on sapphire has SNR of 104 and bandwidth of 0.1 to 3.5 THz.
- KSP Keywords
- GaAs films, Gaas thin films, SI-GaAs, Si substrate, THz detection, THz wave, high SNR, high resistivity Si, low temperature, terahertz detection, thin film(TF)