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학술지
비휘발성 메모리 응용을 위한 ALD법을 이용한 Al2O3 절연막의 특성
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- 저자
- 정순원, 이기식, 구경완
- 발행일
- 200912
- 출처
- 전기학회논문지, v.58 no.12, pp.2420-2424
- ISSN
- 1975-8359
- 출판사
- 대한전기학회 (KIEE)
- 협약과제
- 08IB2100, 강유전체 박막재료의 특성연구, 유병곤
- 초록
- We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with Al2O3/p-Sistructures. The Al2O3 film was grown at 200 ℃ on H-terminated Si wafer by atomic layer deposition (ALD) system.Trimethylaluminum [Al(CH3)3, TMA] and H2O were used as the aluminum and oxygen sources. A cycle of the depositionprocess consisted of 0.1 s of TMA pulse, 10 s of N2 purge, 0.1 s of H2O pulse, and 60 s of N2 purge. The 5 nm thickAl2O3 layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, nomobile charges, and a good interface with Si.
- KSP 제안 키워드
- 5 nm, Atomic Layer Deposition, H-terminated Si, Leakage current, Low leakage, Metal-insulator-semiconductor(MIS), N2 Purge, Si substrate, Si wafer, electrical properties(I-V curve)