BROWSE
Detail
Journal Article
비휘발성 메모리 응용을 위한 ALD법을 이용한 Al2O3 절연막의 특성
Cited - time in 
Share 
Share
- Authors
- 정순원, 이기식, 구경완
- Issue Date
- 2009-12
- Citation
- 전기학회논문지, v.58, no.12, pp.2420-2424
- ISSN
- 1975-8359
- Publisher
- 대한전기학회 (KIEE)
- Language
- Korean
- Type
- Journal Article
- Abstract
- We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with Al2O3/p-Si structures. The Al2O3 film was grown at 200 ℃ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [Al(CH3)3, TMA] and H2O were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of N2 purge, 0.1 s of H2O pulse, and 60 s of N2 purge. The 5 nm thick Al2O3 layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.