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학술지 Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
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저자
이종민, 민병규, 김성일, 이경호, 김해천
발행일
200912
출처
ETRI Journal, v.31 no.6, pp.749-754
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.09.1209.0038
협약과제
09ZB1400, 수요자 중심 융합부품 개발지원, 정희범
초록
The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cutoff frequency (fT) of 129 GHz and a maximum oscillation frequency (fmax) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 dB廓. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV. Copyright © 2009 ETRI.
키워드
40 Gb/s, InGaAs/InP HBT, Module, Package, Post amplifier, Transimpedance amplifier
KSP 제안 키워드
3.5 GHz, 40 gb/s, 6 GHz, Heterojunction Bipolar Transistors(HBTs), InP HBT, Output Voltage, Transimpedance Amplifier(TIA), Voltage swing, Wide bandwidth, cutoff frequency, eye opening