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Journal Article
Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
- Authors
- Jong Min Lee, Byoung Gue Min, Seong Il Kim, Kyung Ho Lee, Hae Cheon Kim
- Issue Date
- 2009-12
- Citation
- ETRI Journal, v.31 no.6, pp.749-754
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Project Code
- 09ZB1400, Development support for customer-based convergence components, Hee-Bum Jung
- Abstract
- The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cutoff frequency (fT) of 129 GHz and a maximum oscillation frequency (fmax) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 dB廓. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV. Copyright © 2009 ETRI.
- KSP Keywords
- 3.5 GHz, 40 gb/s, 6 GHz, Cut-off frequency, Heterojunction Bipolar Transistors(HBTs), Output Voltage, Transimpedance Amplifier(TIA), Voltage swing, Wide bandwidth, eye opening, maximum oscillation frequency