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학술대회
Voltage-Induced Current-Jump Assisted by Infrared or Temperature in P-Type GaAs
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- 발행일
- 200912
- 출처
- International Conference on Advanced Materials and Devices (ICAMD) 2009, pp.1-3
- 협약과제
- 09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 10 16 cm?3 and 5.0 × 10 16 cm?3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
- KSP 제안 키워드
- Critical temperature, Energy gap, Gaas thin films, Infrared intensity, Molecular beam epitaxy(MBE), Ohmic behavior, Solid-source molecular beam epitaxy, induced current, metal-insulator transition, p-Type, temperature sensor(LM35)