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Conference Paper
Voltage-Induced Current-Jump Assisted by Infrared or Temperature in P-Type GaAs
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- Issue Date
- 2009-12
- Citation
- International Conference on Advanced Materials and Devices (ICAMD) 2009, pp.1-3
- Language
- English
- Type
- Conference Paper
- Project Code
- 09MB2300, New electronic device using electric current jump, Hyun-Tak Kim
- Abstract
- Epitaxial Be-doped GaAs thin films with hole concentrations of 3.0 × 10 16 cm?3 and 5.0 × 10 16 cm?3 were deposited on GaAs (001) substrates by solid-source molecular beam epitaxy. An energy gap of GaAs of 1.3 eV was observed by photoluminance. Devices fabricated by the thin films showed abrupt current-jumps and an Ohmic behavior indicating a metal-insulator transition after the jump. The current-jump voltage decreases as the temperature or the infrared intensity increases, which indicates that the devices can be used as a programmable critical temperature sensors.
- KSP Keywords
- Critical temperature, Energy gap, Gaas thin films, Infrared intensity, Molecular beam epitaxy(MBE), Ohmic behavior, Solid-source molecular beam epitaxy, induced current, metal-insulator transition, p-Type, temperature sensor(LM35)