상세정보
학술지
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application
- 발행일
- 201012
- 출처
- Electrochemical and Solid-State Letters, v.13 no.3, pp.H80-H82
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 09MB2800, 모바일 플렉시블 입출력 플랫폼, 조경익
- 초록
- The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200째 C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications. © 2009 The Electrochemical Society.
- KSP 제안 키워드
- Bending radius, Defect passivation, High Mobility, High performance, Hydrogen annealing, Mechanical properties(PMCs), Off Current, Process temperature, Silicon ribbon, change in properties, device applications