상세정보
학술지
Chalcogen based thin Film Transistor using CuInSe2 Photo-Active Layer
- 저자
- 김경암, 송기봉, 김준호, 조규만
- 발행일
- 200911
- 출처
- Current Applied Physics, v.9 no.6, pp.1326-1329
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 초록
- We propose chalcogen-based photo-thin film transistor (P-TFT) using CuInSe2 (CIS) homo-junction. By using a tri-layer process, we fabricated n- and p-type CIS films. Optical and electrical properties of the fabricated CIS films are measured to be suitable for homo-junction. For the fabrication of a P-TFT, n-type CIS generating higher photo current was used for a channel layer whereas p-type CIS with higher carrier density was used for source and drain. The fabricated transistor exhibited typical transistor operation of p-channel enhancement mode and current increase with light. © 2009 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Active Layer, CIS films, Carrier density, Channel layer, N-type, Optical and electrical properties, P-Channel, Source and drain, Thin-Film Transistor(TFT), Tri-layer, electrical properties(I-V curve)