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Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature
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- Authors
- Jung Won Seo, Jae Woo Park, Keong Su Lim, Sang Jung Kang, Yun Ho Hong, Ji Hwan Yang, Liang Fang, Gun Yong Sung, Han Ki Kim
- Issue Date
- 2009-12
- Citation
- Applied Physics Letters, v.95, no.13, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future. © 2009 American Institute of Physics.
- KSP Keywords
- Bottom electrode, Electronic systems, Flexible electronics, Flexible substrate, High transmittance, High transparency, Memory performance, Resistive Random Access Memory(RRAM), Zinc oxide(ZnO), bending test, data retention