상세정보
학술지
Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature
- 저자
- 서중원, 박재우, 임굉수, 강상중, 홍윤호, 양지환, 황리안, 성건용, 김한기
- 발행일
- 200912
- 출처
- Applied Physics Letters, v.95 no.13, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MC3300, 프로그램 가능한 바이오 CMOS 전계형 소자, 성건용
- 초록
- We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future. © 2009 American Institute of Physics.
- KSP 제안 키워드
- Bottom electrode, Electronic systems, Flexible electronics, Flexible substrate, High transmittance, High transparency, Memory performance, Resistive Random Access Memory(RRAM), Zinc oxide(ZnO), bending test, data retention