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Journal Article Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature
Cited 123 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Jung Won Seo, Jae Woo Park, Keong Su Lim, Sang Jung Kang, Yun Ho Hong, Ji Hwan Yang, Liang Fang, Gun Yong Sung, Han Ki Kim
Issue Date
2009-12
Citation
Applied Physics Letters, v.95, no.13, pp.1-4
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.3242381
Abstract
We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future. © 2009 American Institute of Physics.
KSP Keywords
Bottom electrode, Electronic systems, Flexible electronics, Flexible substrate, High transmittance, High transparency, Memory performance, Resistive Random Access Memory(RRAM), Zinc oxide(ZnO), bending test, data retention