상세정보
학술지
Phase-Transition Driven Memristive System
- 발행일
- 200912
- 출처
- Applied Physics Letters, v.95 no.4, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena. © 2009 American Institute of Physics.
- KSP 제안 키워드
- Metal phase, Phase change, Phase transition, Potential applications, memristive system, passive circuits, thin film(TF), vanadium dioxide