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Phase-Transition Driven Memristive System
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- Authors
- T. Driscoll, H. -T. Kim, B. -G. Chae, M. Di Ventra, D. N. Basov
- Issue Date
- 2009-12
- Citation
- Applied Physics Letters, v.95, no.4, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena. © 2009 American Institute of Physics.
- KSP Keywords
- Metal phase, Phase change, Phase transition, Potential applications, memristive system, passive circuits, thin film(TF), vanadium dioxide