BROWSE
Detail
Journal Article
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
Cited 106 time in 
Share 
Share
- Authors
- Jeong Min Lee, In Tak Cho, Jong Ho Lee, Woo Seok Cheong, Chi Sun Hwang, Hyuck In Kwon
- Issue Date
- 2009-12
- Citation
- Applied Physics Letters, v.94, no.22, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- A comparative study was made of the performance and electrical instabilities in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors with Al2 O3 and Al2 O3 / SiNx gate dielectrics. Steeper subthreshold slope is observed in Al2 O3 devices, which shows that the density of trap states at the interface of a-IGZO/ Al2 O3 is lower than that of a-IGZO/ SiNx. Under high bias-stresses, a larger degradation is observed in Al2 O3 / SiNx devices. The device degradation for both devices are mainly attributed to the charge trapping phenomenon, but the different time dependence of threshold voltage shift shows that trapped electrons are more easily redistributed inside the Al2 O3 dielectrics. © 2009 American Institute of Physics.
- KSP Keywords
- Charge trapping, Density of trap states, Subthreshold slope(SS), Thin-Film Transistor(TFT), Threshold voltage shift, Time dependence, Trapped Electron(TE), Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO), comparative study, dependence of threshold voltage