상세정보
학술지
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
- 발행일
- 200912
- 출처
- Applied Physics Letters, v.94 no.22, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- A comparative study was made of the performance and electrical instabilities in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors with Al2 O3 and Al2 O3 / SiNx gate dielectrics. Steeper subthreshold slope is observed in Al2 O3 devices, which shows that the density of trap states at the interface of a-IGZO/ Al2 O3 is lower than that of a-IGZO/ SiNx. Under high bias-stresses, a larger degradation is observed in Al2 O3 / SiNx devices. The device degradation for both devices are mainly attributed to the charge trapping phenomenon, but the different time dependence of threshold voltage shift shows that trapped electrons are more easily redistributed inside the Al2 O3 dielectrics. © 2009 American Institute of Physics.
- KSP 제안 키워드
- Charge trapping, Density of trap states, Subthreshold slope(SS), Thin-Film Transistor(TFT), Threshold voltage shift, Time dependence, Trapped Electron(TE), Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO), comparative study, dependence of threshold voltage