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Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
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- Authors
- Sung Youl Choi, Bong Jun Kim, Yong Wook Lee, Yong Sik Lim, Jeong Yong Choi, Hyun Tak Kim
- Issue Date
- 2009-12
- Citation
- Applied Physics Letters, v.95, no.23, pp.1-4
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its peak intensity decreases in an applied voltage, and that the MIT temperature is between 410 and 440 K, and that the current jump is controlled by temperature, voltage and light intensity. The control of the jump voltage, a characteristic of the Mott MIT, reveals that these devices can be applied for programmable critical temperature sensors or optical sensors with high sensitivity. © 2009 American Institute of Physics.
- KSP Keywords
- Critical temperature, Gaas thin films, High Sensitivity, Light intensity, Peak intensity, applied voltage, energy gap, metal-insulator transition, optical sensor, p-Type, temperature sensor(LM35)