상세정보
학술지
Control of Current-Jump Induced by Voltage, Temperature, Light in P-Type GaAs: Programmable Critical Temperature Sensor
- 발행일
- 200912
- 출처
- Applied Physics Letters, v.95 no.23, pp.1-4
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its peak intensity decreases in an applied voltage, and that the MIT temperature is between 410 and 440 K, and that the current jump is controlled by temperature, voltage and light intensity. The control of the jump voltage, a characteristic of the Mott MIT, reveals that these devices can be applied for programmable critical temperature sensors or optical sensors with high sensitivity. © 2009 American Institute of Physics.
- KSP 제안 키워드
- Critical temperature, Energy gap, Gaas thin films, High Sensitivity, Optical sensors, Peak intensity, applied voltage, light intensity, metal-insulator transition, p-Type, temperature sensor(LM35)