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학술지 Biosensors using the Si Banochannel Junction-Isolated from the Si bulk Substrate
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저자
안창근, 박찬우, 양종헌, 아칠성, 김안순, 김태엽, 유한영, 장문규, 김상훈, 백인복, 이성재, 성건용
발행일
200912
출처
Journal of Applied Physics, v.106 no.11, pp.1-6
ISSN
0021-8979
출판사
American Institute of Physics(AIP)
DOI
https://dx.doi.org/10.1063/1.3266161
협약과제
09MC3300, 프로그램 가능한 바이오 CMOS 전계형 소자, 성건용
초록
The biosensor using a silicon nanochannel field effect transistor has been developed on the basis of a bulk silicon substrate instead of an expensive silicon-on-insulator material, for low cost applications. "Top-down" fabricated Si nanochannels for detecting prostate specific antigen (PSA) are electrically isolated from the bulk Si substrate only by a reverse-biased p-n junction with very low reverse leakage currents. The reverse leakage current flowing through the p-n junction is small enough to be ignored, when compared with the current flowing through the p -type Si channel; roughly 100 times lower. The surface immobilization of anti-PSA has been confirmed by the specific binding test of DNA stabilized Au nanoparticles (NPs), showing 1200 NPs/μ m2 and atomic force microscopy surface analysis. The injection of 10 ng/ml PSA solutions leads to a clear increase in the conductance of Si nanochannels, indicating the specific binding of PSA with the immobilized anti-PSA. The similar signal changes were observed on the injection of the 1 pg/ml PSA, very low concentration of PSA. © 2009 American Institute of Physics.
KSP 제안 키워드
Atomic force microscope(AFM), Au nanoparticles(Au-NPs), Field-effect transistors(FETs), Insulator material, Low concentration, Low-cost, P-N junction, Petri net(PN), Reverse leakage current, Si channel, Si substrate