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학술지 Dependence of Cu(In,Ga)Se2 Solar Cell Performance on Cd Solution Treatment Conditions
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박상욱, 박순용, 이은우, 정우진, 전찬욱, 정용덕, 박래만, 김제하
Molecular Crystals and Liquid Crystals, v.551 no.1, pp.221-227
Taylor & Francis
In the current study, chemical bath deposition (CBD) was used to grow CdS thin films on a Cu(In,Ga)Se2 (CIGS) absorption layer, in order to examine the effects of CdS deposition conditions on the properties of CIGS solar cell devices. The dip time leading up to the start of CdS synthesis is thought to be an important process variable determining the concentration of Cd ions diffused into the CIGS as well as the condition of the CIGS surface. Accordingly, the behavior of the CIGS solar cell efficiency variation was observed while different dip times were applied, at 4, 15 and 30 minutes, respectively. When the dip time was extended, the series resistance (Rs) of the device fell by a substantial margin, leading to improved photoelectric conversion efficiency and enhanced uniformity in device properties. This can be attributed to the effect of CIGS surface cleaning by the NH4OH contained in the reaction solution. © 2011 Taylor & Francis Group, LLC.
KSP 제안 키워드
Absorption layer, CIGS solar cell, CdS thin films, Chemical bath deposition(CBD), Conversion efficiency(C.E.), Deposition conditions, Device properties, Photoelectric conversion efficiency, Solar cell efficiency, Solar cell performance, Solution treatment