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Journal Article
Bipolar Resistive Switching in Amorphous Titanium Oxide Thin Film
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- Authors
- Hu Young Jeong, Jeong Yong Lee, Min-Ki Ryu, Sung-Yool Choi
- Issue Date
- 2010-01
- Citation
- Physica Status Solidi (RRL), v.4, no.1-2, pp.1-3
- ISSN
- 1862-6254
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA
- Language
- English
- Type
- Journal Article
- Abstract
- Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for thecarrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- KSP Keywords
- Activation Energy, Aluminum electrodes, Amorphous titanium oxide, Co. KGaA, Current regime, Electrical Measurements, Fermi energy level, High temperature region, Oxygen ions, Plasma-enhanced atomic layer deposition, Resistive switching mechanism