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Journal Article Effect of Annealing on CdS/Cu(In,Ga)Se2 Thin-film Solar Cells
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Authors
Yong-Duck Chung, Dae-Hyung Cho, Nae-Man Park, Kyu-Seok Lee, Jeha Kim
Issue Date
2011-01
Citation
Current Applied Physics, v.11, no.1 Suppl., pp.S65-S67
ISSN
1567-1739
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.cap.2010.11.018
Project Code
09MB7800, Development of mass production technology of high efficiency and long durability flexible CIGS thin film solar cell and module, Kim Je Ha
Abstract
We have investigated the effect of annealing thin-film CdS/Cu(In,Ga)Se 2 (CIGS) on solar cell performance. CdS/CIGS/Mo and CdS deposited on glass substrates were annealed on a hot plate in an air environment. Both the transmittance of the CdS layer at short wavelength and the X-ray diffraction (XRD) intensity of its (200)H peak increased after annealing. The quantum efficiency of the fabricated solar cells with annealed CdS buffer layer was also enhanced at short wavelength. A CIGS solar cell with a CdS buffer annealed at 200 °C for 1 min showed an efficiency of 16.47% (Jsc = 34.18 mA/cm2, Voc = 0.642 V and Fill Factor = 75.0%) which is higher than that of an un-annealed solar cell by about 0.6%. We believe that annealing increases the optical transmittance and eliminates recombination centers at the p-n junction. This leads to the improved performance of CIGS solar cells. © 2010 Elsevier B.V. All rights reserved.
KSP Keywords
42 V, CIGS solar cell, CdS buffer layer, Glass substrate, Optical transmittance, P-N junction, Petri net(PN), Quantum Efficiency, Solar cell performance, Thin film solar cells, Thin-film Cds