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학술지 Effect of Annealing on CdS/Cu(In,Ga)Se2 Thin-film Solar Cells
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저자
정용덕, 조대형, 박래만, 이규석, 김제하
발행일
201101
출처
Current Applied Physics, v.11 no.1 Suppl., pp.S65-S67
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2010.11.018
협약과제
09MB7800, 고효율 장수명 Flexible CIGS 박막 태양전지 및 모듈 양산기술개발, 김제하
초록
We have investigated the effect of annealing thin-film CdS/Cu(In,Ga)Se 2 (CIGS) on solar cell performance. CdS/CIGS/Mo and CdS deposited on glass substrates were annealed on a hot plate in an air environment. Both the transmittance of the CdS layer at short wavelength and the X-ray diffraction (XRD) intensity of its (200)H peak increased after annealing. The quantum efficiency of the fabricated solar cells with annealed CdS buffer layer was also enhanced at short wavelength. A CIGS solar cell with a CdS buffer annealed at 200 °C for 1 min showed an efficiency of 16.47% (Jsc = 34.18 mA/cm2, Voc = 0.642 V and Fill Factor = 75.0%) which is higher than that of an un-annealed solar cell by about 0.6%. We believe that annealing increases the optical transmittance and eliminates recombination centers at the p-n junction. This leads to the improved performance of CIGS solar cells. © 2010 Elsevier B.V. All rights reserved.
키워드
Annealing, CdS, Cu(In,Ga)Se 2, Solar cell, Thin film
KSP 제안 키워드
42 V, CIGS solar cell, CdS buffer layer, Glass substrate, Optical transmittance, P-N junction, Petri net(PN), Quantum Efficiency, Solar cell performance, Thin film solar cells, Thin-film Cds