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Effect of Annealing on CdS/Cu(In,Ga)Se2 Thin-film Solar Cells
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- Authors
- Yong-Duck Chung, Dae-Hyung Cho, Nae-Man Park, Kyu-Seok Lee, Jeha Kim
- Issue Date
- 2011-01
- Citation
- Current Applied Physics, v.11, no.1 Suppl., pp.S65-S67
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the effect of annealing thin-film CdS/Cu(In,Ga)Se 2 (CIGS) on solar cell performance. CdS/CIGS/Mo and CdS deposited on glass substrates were annealed on a hot plate in an air environment. Both the transmittance of the CdS layer at short wavelength and the X-ray diffraction (XRD) intensity of its (200)H peak increased after annealing. The quantum efficiency of the fabricated solar cells with annealed CdS buffer layer was also enhanced at short wavelength. A CIGS solar cell with a CdS buffer annealed at 200 °C for 1 min showed an efficiency of 16.47% (Jsc = 34.18 mA/cm2, Voc = 0.642 V and Fill Factor = 75.0%) which is higher than that of an un-annealed solar cell by about 0.6%. We believe that annealing increases the optical transmittance and eliminates recombination centers at the p-n junction. This leads to the improved performance of CIGS solar cells. © 2010 Elsevier B.V. All rights reserved.
- KSP Keywords
- 42 V, CIGS solar cell, CdS buffer layer, Fill factor(F.F.), Glass substrate, Hot plate, Improved performance, P-N junction, Petri net(PN), Solar cell performance, Thin film solar cells