상세정보
학술지
Effect of Annealing on CdS/Cu(In,Ga)Se2 Thin-film Solar Cells
- 발행일
- 201101
- 출처
- Current Applied Physics, v.11 no.1 Suppl., pp.S65-S67
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 초록
- We have investigated the effect of annealing thin-film CdS/Cu(In,Ga)Se 2 (CIGS) on solar cell performance. CdS/CIGS/Mo and CdS deposited on glass substrates were annealed on a hot plate in an air environment. Both the transmittance of the CdS layer at short wavelength and the X-ray diffraction (XRD) intensity of its (200)H peak increased after annealing. The quantum efficiency of the fabricated solar cells with annealed CdS buffer layer was also enhanced at short wavelength. A CIGS solar cell with a CdS buffer annealed at 200 °C for 1 min showed an efficiency of 16.47% (Jsc = 34.18 mA/cm2, Voc = 0.642 V and Fill Factor = 75.0%) which is higher than that of an un-annealed solar cell by about 0.6%. We believe that annealing increases the optical transmittance and eliminates recombination centers at the p-n junction. This leads to the improved performance of CIGS solar cells. © 2010 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- 42 V, CIGS solar cell, CdS buffer layer, Glass substrate, Optical transmittance, P-N junction, Petri net(PN), Quantum Efficiency, Solar cell performance, Thin film solar cells, Thin-film Cds