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Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
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- Authors
- Kang-Jun Baeg, Dongyoon Khim, Ju-Hwan Kim, Minji Kang, In-Kyu You, Dong-Yu Kim, Yong-Young Noh
- Issue Date
- 2011-04
- Citation
- Organic Electronics, v.12, no.4, pp.634-640
- ISSN
- 1566-1199
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- In the present study, we demonstrate inkjet-printed n-type organic field-effect transistors (OFETs) and their complementary inverters with high performance uniformity, using soluble N,N??-bis(n-octyl)-(1,7&1,6)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2). The device performance and uniformity were improved by ink-jet printing a PDI8-CN 2 solution onto a heated substrate (60 °C). The printed features, which were discontinuous crystalline films at RT, were uniform films when the substrate temperature was increased to 60 °C. Optimized n-channel PDI8-CN2 FETs showed a high field-effect mobility of 0.05-0.06 cm2/Vs, a high on/off ratio of ~106, and a high uniformity that was within 10% with a bottom-gate/bottom-contact device configuration. Inkjet-printed organic complementary inverters were constructed by direct inkjet-printing of n-channel (PDI8-CN2) and p-channel (6,13-bis(triisopropyl-silylethynyl)-pentacene or poly(3-hexylthiophene)) organic semiconductors onto silicon dioxide gate dielectrics. The inkjet-printed organic complementary inverters exhibited a high voltage gain of more than 15 and small standard deviation of inverting voltage and gain of 짹0.95 V and 짹0.56, respectively, for measuring 12 samples from four difference batches. © 2011 Elsevier B.V. All rights reserved.
- KSP Keywords
- 3-hexylthiophene(SEM poly), Bottom contact, Bottom gate, Contact device, Crystalline films, Device configuration, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Heated substrate, High Voltage Gain, High performance